any changing of specification will not be informed individual MMBTA13 mmbta14 darlington amplifier transistor npn silicon k j c h l a b s g v 3 1 2 1 2 3 dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 http://www.secosgmbh.com elektronische bauelemente collec t or 3 base 1 emitter 2 f e a t u r e s p o w e r d i s s i p a t i o n p c m : 0 . 3 w ? t a m b = 2 5 ?? ? c o l l e c t o r c u r r e n t i c m : 0 . 3 a c o l l e c t o r - b a s e v o l t a g e v ( b r ) c b o : 3 0 v o p e r a t i n g a n d s t o r a g e j u n c t i o n t e m p e r a t u r e r a n g e t j ? t s t g : - 5 5 ?? t o + 1 5 0 e l e c t r i c a l c h a r a c t e r i s t i c s ? t a m b = 2 5 ?? u n l e s s o t h e r w i s e s p e c i f i e d ? p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n m a x u n i t co llecto r -b ase b r eakd o w n v o lt ag e v (b r)cb o ic= 100 a i e =0 30 v co llecto r -emitter b r ea kd o w n v o lt ag e v (b r)ce o ic= 100ua i b =0 30 v co llecto r -emitter b r ea kd o w n v o lt ag e v ( br ) ebo i e = 100 a i c =0 10 v co llecto r cu t-o ff cu rren t i cb o v cb = 30 v , i e = 0 0.1 a emitter cut-off current i ebo v eb = 10v , i c = 0 0.1 a h fe (1 ) * v ce =5 v , i c = 10ma mmbt a 13 m m b t a 1 4 500 0 100 00 dc cu rr en t g a in h fe (2 ) * v ce =5 v , i c = 100ma mmbt a 13 m m b t a 1 4 100 00 200 00 co llecto r -emitter satu r atio n v o lt ag e v ce (sa t ) * i c = 100 ma, i b =0.1ma 1.5 v base-emitter v o lt age v be * v ce =5 v , i c = 100ma 2.0 v t r a n s ition fre que nc y f t v ce =5 v , i c = 1 0 ma f= 100mhz 125 mhz * pulse t e st : puls e w i d t h 3 00sduty cycle2% marking : mmbt a13:k2 d mmbt a 14 k3d d 01 -jun-2004 rev. b page 1 of 3 rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual MMBTA13 mmbta14 darlington amplifier transistor npn silicon http://www.secosgmbh.com elektronische bauelemente figure 1 . noise v oltage f, frequency (hz) 50 100 200 500 20 figure 2 . noise current f, frequency (hz) figure 3 . t otal w ideband noise v oltage r s , source resist ance (k w ) figure 4 . w ideband noise figure r s , source resist ance (k w ) 5.0 50 70 100 200 30 10 20 1.0 10 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bandwidth = 1.0 hz r s 0 i c = 1.0 ma 100 m a 10 m a bandwidth = 1.0 hz i c = 1.0 ma 100 m a 10 m a e n , noise vol t age (nv) i n , noise current (pa) 2.0 5.0 10 20 50 100 200 500 1000 bandwidth = 10 hz t o 15.7 khz i c = 10 m a 100 m a 1.0 ma 8.0 10 12 14 6.0 0 4.0 1.0 2.0 5.0 10 20 50 100 200 500 1000 2.0 bandwidth = 10 hz t o 15.7 khz 10 m a 100 m a i c = 1.0 ma v t , t ot al wideband noise vol t age (nv) nf , noise figure (db) 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k figure 5 . thermal response t, time (ms) 1.0 r(t), transient thermal 2.0 5.0 1.0 0.5 0.2 0.1 resist ance (normalized) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 50 10 200 500 100 1.0k 2.0k 5.0k 10k d = 0.5 0.2 0.1 0.05 single pulse single pulse z q jc(t) = r(t) ? r q jc t j(pk) - t c = p (pk) z q jc(t) z q ja(t) = r(t) ? r q ja t j(pk) - t a = p (pk) z q ja(t) 01 -jun-2004 rev. b page 2 of 3
any changing of specification will not be informed individual MMBTA13 mmbta14 darlington amplifier transistor npn silicon http://www.secosgmbh.com elektronische bauelemente figure 6. capacitance v r , reverse voltage (volts) 5.0 7.0 10 20 3.0 figure 7. high frequency current gain i c , collector current (ma) figure 8. dc current gain i c , collector current (ma) figure 9. collector saturation region i b , base current ( m a) 2.0 200k 5.0 0.04 4.0 2.0 1.0 0.8 0.6 0.4 0.2 t j = 25 c c, capacitance (pf) 1.5 2.0 2.5 3.0 1.0 0.5 |h fe |, small-signal current gain h fe , dc current gain v ce , collector-emitter voltage (volts) 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 c ibo c obo 0.5 1.0 2.0 0.5 10 20 50 100 200 500 v ce = 5.0 v f = 100 mhz t j = 25 c 100k 70k 50k 30k 20k 10k 7.0k 5.0k 3.0k 2.0k 7.0 10 20 30 50 70 100 200 300 500 t j = 125 c 25 c -55 c v ce = 5.0 v 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 t j = 25 c i c = 10 ma 50 ma 250 ma 500 ma figure 10. aono voltages i c , collector current (ma) figure 11. temperature coefficients i c , collector current (ma) 1.6 5.0 -1.0 v, voltage (volts) 1.4 1.2 1.0 0.8 0.6 7.0 10 20 30 50 70 100 200 300 500 v be(sat) @ i c /i b = 1000 r v , temperature coefficients (mv/ c) q t j = 25 c v be(on) @ v ce = 5.0 v v ce(sat) @ i c /i b = 1000 -2.0 -3.0 -4.0 -5.0 -6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 25 c to 125 c -55 c to 25 c *r vc for v ce(sat) vb for v be 25 c to 125 c -55 c to 25 c *applies for i c /i b h fe /3.0 01 -jun-2004 rev. b page 3 of 3
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